na. 20 stern ave. springfield, new jersey 07081 u.3a telephone: 379- (212) 227-0008 fax; (973) 378-0980 2N3728 npn high performance differential amplifiers llfu . . . 0.0-1.0 prom 100 ma to 1.0 ma 9 20'c, 0.8-1.0 from 100 jja to 1.0 ma, -65* c to +125c = ? ? ? 3- mv (max> ? |avbe! ... 10 uv/c (max) from 100 ua to 1.0 ma, -5s"c to +125"c absolute maximum ratings (note 1) maximum temperature* storage temperature operating junction temperature lead temperature (60 seconds) maximum power dissipation (notes 2 & 3) total dissipation at 25"c case temperature lit 100"c cnin tomporaluro at 25c ambient temperature maximum voltages and current vcbo collector to base voltage collector to emitter voltage (note 4) emitter to base voltage l collector current vc1c2 collector^ to comectorj voltage voltage rating any lead to case ona side low 0,67 w 0.43 w -65 c to +200" c 200 c 300 c both sides 1.6w 0.91 w 0,55 w 60v 30v 5.0v 500ma 200 v 200v coeebc 123456 vi semi-conductors reserves the right to change test conditions, parameter limin ;md package dimensions without notice information furnished by nj scmi-c'unductors is believed to be both accurate and reliable.?the lime of going to press. however semi ?(. i xultitiors .i^suincs no re>punsibilily lor nny errors or uinissinns oisvovvrcd in us u.te nj senn-c oiijui.li rs _u-:ii incrs in vcrif) lh,? il.il;i,hitts .ire lurrent before plnciks! urilers
electrical characteristics (25"c ambient temperature unless otherwise noted) (cont'd.) symbol "fe bvcbo bvebo vceoisus) vce(mt) vbe(sat) ' icbo iebo hft cob cjb hie hre hoe hfe nf- hfe1 hfe2 vbe1-vbe2l characteristic dc current gain collector to base breakdown voltage emitter to base breakdown voltage collector to emitter sustaining voltage (notes 4 & 6) collector saturation voltage (note 6) base saturation voltage (note 6) collector cutoff current emitter cutoff current high frequency current gain common base, open circuit, output capacitance common base, open circuit, input capacitance input impedance reverse voltage feedback ratio output conductance forward current transfer ratio wide band noise figure dc current gain ratio (note 5) base to emitter voltage differential a(vgei-v[je2l|base !0 emitter voltage differential a(vbe1-vbe2>i i base to emitter voltage differential min. 30 45 80 60 6.0 30 4.0 2.5 1.2 50 0.8 max. , 180 280 0.22 1.1 10 10 10 6.0 8.0 20 6.0 300 20 200 7.0 1.0 5.0 1.6 20 j*v/c) 2.0 20 /iv/c) units v v na *?a na pf pf k? x10~6 db mv mv mv test conditions ic ? 0.1 ma, vce ' 5.0 v ic- i.om.a. vce "5.0v 1c- 150ma, vce -6.0v (noto6) ic-io/ia. ie-.o ic-o, ie-iom ic'ioma, lb"0 * \q 1 150 ma, iq ? 15ma 1c" 150ma, ib -15ma ie ? o. vcb " 50 v le-o.vcb-50v,ta-150c ic-o.veb-3.0v ic ? 1 .0 ma, vce ? 10 v. f - 20 mhz 1c ? 50 ma. vce - 10 v, f " 100 mhz ie "0. vcb "10v. ^140 khz ic * . veb " 2.0 v, f - 140 khz ic " 1.0ma. vce = 10 v, f = 1.0 khz 1c ? 1.0ma. vce - 10 v.f ? 1.0 khz ic = 1 .0 ma. vce = 10 v, f * 1 .0 khz 1c" 1-0 rna, vce- 10 v,f = 1.0khz 1c - 0.1 ma, vce " 5.0 v, f = 1 5.7 khz, 3.0 db pts. @ 25 hz and 10 khz. rs - 1 .0 kit 1c" 100 lift, to 1.0ma, vce " 5.0 v 1c - 100 ma to 1 .0 ma. vce " 5.0 v c ? 100 pa to 1 .0 ma, vce " 5.0 v ta - -55 c to +25 c c - 100 pa to 1 .0 ma, vce ? 5.0 v ta- +25 c to+125c notes: 1. these ratings are limiting value* above which the serviceability of any individual semiconductor device may be impaired. 2. thnso nro stnnrly unto limits. tho fnctory should ho consulted on applications involving pulsod or low duty cyclo opornllons. 3. those rations glvo a maximum (unction temperature of 200"c and (unction to ambient thermal resistance of 384"c/w (derating factor of 2.57 mw/ c) for one side; 318 c/w (derating factor of 3.14mw/"o for both sides; (unction to case thermal roslstanee of 175"c/w (derating factor of 5.71 mw/ c) for one sldo; 109 c/w (derating factor of 9.15 mw/"o for both sides. 4. rating refers to i high currant point where collector to emitter voltege it lowest, 5. lowest of two hpg readings is taken as hpei for purposes of this retlo. 6. pulse conditions: length - 300 ms; duty cycle - ix.
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